SSRF4N60 datasheet(2/4 Pages) SECOS

부품명	SSRF4N60

상세설명	4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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SSRF4N60

4A , 600 V , RDS(ON) 2.4 Ω

Ω

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente

5-Jul-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

Gate-Threshold Voltage

VGS(th)

2.0

-

4.0

V

VDS=VGS, ID=250µA

Drain-Source On-Resistance

RDS(ON)

-

2.0

2.4

VGS=10V, ID=2A

Drain-Sounce Breakdown Voltage

BVDSS

600

-

V

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

-

10

µA

VDS=600V, VGS=0

Gate-Body Leakage Current, Forward

IGSSF

-

100

nA

VGS=30V, VDS=0

Gate-Body Leakage Current, Reverse

IGSSR

-

-100

nA

VGS= -30V, VDS=0

Dynamic

Total Gate Charge

1.2

Qg

-

19.8

-

nC

VDS=480V, ID=4.4A,

VGS=10V

Gate-Source Charge

1.2

Qgs

-

4

-

Gate-Drain Charge

1.2

Qgd

-

7.2

-

Turn-on Delay Time

1.2

Td(on)

-

27

-

nS

VDD=300V, ID =4.4A, RG=25

Rise Time

1.2

Tr

-

19

-

Turn-off Delay Time

1.2

Td(off)

-

160

-

Fall Time

1.2

Tf

-

22

-

Input Capacitance

Ciss

-

672

-

pF

VDS=25V, VGS=0, f =1.0MHz

Output Capacitance

Coss

-

66

-

Reverse Transfer Capacitance

Crss

-

4.7

-

Maximum Continuous Drain-Source

Diode Forward Current

IS

-

4.0

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

-

16

A

Drain-Source Diode Forward Voltage

VSD

-

1.4

V

VGS=0, IS=4.0A

Reverse Recovery Time

Trr

-

300

-

nS

VGS=0, IS=4.0A,

IF / dt =100A/µs

Reverse Recovery Charge

1

Qrr

-

2.2

-

µC

Notes:

1.

Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%.

2.

Basically not affected by working temperature.

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