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BAQ35 데이터시트(PDF) 2 Page - Vishay Siliconix |
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BAQ35 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85537 Rev. 1.8, 01-Sep-10 BAQ33, BAQ34, BAQ35 Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Min. Typ. Max. Unit Forward voltage IF = 100 mA VF 1V Reverse current E ≤ 300 lx, rated VR IR 13 nA E ≤ 300 lx, rated VR, Tj = 125 °C IR 0.5 μA E ≤ 300 lx, VR = 15 V BAQ33 IR 0.5 1 nA E ≤ 300l x, VR = 30 V BAQ34 IR 0.5 1 nA E ≤ 300 lx, VR = 60 V BAQ35 IR 0.5 1 nA Breakdown voltage IR = 5 µA, tp/T = 0.01, tp= 0.3 ms BAQ33 V(BR) 40 V IR = 5 µA, tp/T = 0.01, tp = 0.3 ms BAQ34 V(BR) 70 V BAQ35 V(BR) 140 V Diode capacitance VR = 0, f = 1 MHz CD 3pF Figure 1. Reverse Current vs. Junction Temperature 040 80 120 160 1 10 100 1000 10000 Tj - Junction Temperature (°C) 200 94 9079 Scattering Limit VR = VRRM Figure 2. Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9078 Scattering Limit Tj =25 °C |
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