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BUZ326 데이터시트(PDF) 4 Page - Siemens Semiconductor Group |
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BUZ326 데이터시트(HTML) 4 Page - Siemens Semiconductor Group |
4 / 9 page Semiconductor Group 4 07/96 BUZ 326 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 10.5 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 42 Inverse diode forward voltage VGS = 0 V, IF = 22 A VSD - 1 1.4 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 280 - ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr - 3 - µC |
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