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BUZ356 데이터시트(PDF) 7 Page - Siemens Semiconductor Group |
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BUZ356 데이터시트(HTML) 7 Page - Siemens Semiconductor Group |
7 / 9 page 7 07/96 Semiconductor Group BUZ 356 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: V GS = VDS, ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 T j 2% typ 98% Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 3.9 A, VGS = 10 V -60 -20 20 60 100 °C 160 T j 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Ω 8.0 R DS (on) typ 98% Typ. capacitances C = f (VDS) parameter: VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS 1 10 2 10 3 10 4 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs -1 10 0 10 1 10 2 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
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