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BUZ71AL 데이터시트(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ71AL 데이터시트(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 71 AL Not for new design Avalanche energy E AS = ƒ(Tj) parameter: ID = 14 A, VDD = 25 V RGS = 25 Ω, L = 30.6 µH 20 40 60 80 100 120 °C 160 T j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 mJ 6.5 E AS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 21 A 0 4 8 12 16 20 24 28 nC 34 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V (BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 45 46 47 48 49 50 51 52 53 54 55 56 57 V 60 V (BR)DSS |
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