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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BUZ80 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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BUZ80 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 9 page  Semiconductor Group 3 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 2 A gfs 1 3.6 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 900 1350 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 95 140 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 50 75 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(on) - 15 25 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr - 65 85 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) - 200 270 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf - 65 85 |
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유사한 설명 - BUZ80 |
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