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BUZ90 데이터시트(PDF) 5 Page - Siemens Semiconductor Group |
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BUZ90 데이터시트(HTML) 5 Page - Siemens Semiconductor Group |
5 / 9 page 5 07/96 Semiconductor Group BUZ 90 Drain current ID = ƒ(TC) parameter: V GS ≥ 10 V 0 20 40 60 80 100 120 °C 160 T C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 I D Power dissipation Ptot = ƒ(TC) 0 20 40 60 80 100 120 °C 160 T C 0 10 20 30 40 50 60 W 80 P tot Safe operating area I D = ƒ(VDS) parameter: D = 0.01, T C = 25°C -1 10 0 10 1 10 2 10 A I D 10 0 10 1 10 2 10 3 V V DS DC 10 ms 1 ms 100 µs t p = 15.0µs Transient thermal impedance Z th JC = ƒ(tp) parameter: D = t p / T -3 10 -2 10 -1 10 0 10 1 10 K/W Z thJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 |
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