전자부품 데이터시트 검색엔진 |
|
CFY30 데이터시트(PDF) 2 Page - Siemens Semiconductor Group |
|
CFY30 데이터시트(HTML) 2 Page - Siemens Semiconductor Group |
2 / 6 page GaAs FET CFY 30 ________________________________________________________________________________________________________ Siemens Aktiengesellschaft pg. 2/6 11.01.1996 HL EH PD 21 Electrical characteristics at TA = 25°C, unless otherwise specified Characteristics Symbol min typ max Unit Drain-source saturation current V DS = 3.5 V, V GS = 0 V I DSS 20 50 80 mA Pinch-off voltage V DS = 3.5 V I D = 1 mA V GS(P) -0.5 -1.3 -4.0 V Transconductance V DS = 3.5 V I D = 15 mA g m 20 30 - mS Gate leakage current V DS = 3.5 V I D = 15 mA I G - 0.1 2 µA Noise figure V DS = 3.5 V I D = 15 mA f = 4 GHz f = 6 GHz F - - 1.4 2.0 1.6 - dB Associated gain V DS = 3.5 V I D = 15 mA f = 4 GHz f = 6 GHz G a 10 - 11.5 8.9 - - dB Maximum available gain V DS = 3.5 V I D = 15 mA f = 6 GHz MAG - 11.2 - dB Maximum stable gain V DS = 3.5 V I D = 15 mA f = 4 GHz MSG - 14.4 - dB Power output at 1 dB compression V DS = 4 V I D = 30 mA f = 6 GHz P 1dB -16 - dBm |
유사한 부품 번호 - CFY30 |
|
유사한 설명 - CFY30 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |