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UF3055 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UF3055
상세설명  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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UF3055
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-443.a
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
60
V
Drain Gate Voltage (RGS = 10MΩ )
VDGR
60
V
Continuous
±20
V
Gate Source Voltage
Non-Repetitive (tP ≤10 ms)
VGSS
±30
V
Continuous Drain Current (Ta = 25°C)
ID
3.0
A
Pulsed Drain Current (tP ≤10 µs)
IDM
9.0
A
Single Pulsed Avalanche Energy (Note 2)
EAS
74
mJ
Power Dissipation (Ta = 25°C)
PD
2
W
Junction Temperature
TJ
175
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ = 25°C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note)
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (Note 1)
VGS= 0V, ID =250µA
60
68
V
Temperature Coefficient (Positive)
BVDSS
66
mV/°C
Drain-Source Leakage Current
IDSS
VGS=0V, VDS=60V
1.0
µA
Gate-Source Leakage Current
IGSS
VGS = ±20 V, VDS =0V
±100
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
VGS=VDS, ID =250µA
2.0
3.0
4.0
V
Temperature Coefficient (Negative)
VGS(TH)
6.6
mV/°C
Static Drain-Source On-State Resistance
RDS(ON) VGS =10 V, ID =1.5A
88
110
mΩ
Static Drain-to-Source On-Resistance
VDS(ON) VGS =10 V, ID =3A
0.27
0.40
V
Forward Tran conductance
gFS
VDS=8.0V, ID=1.7A
3.2
M
DYNAMIC PARAMETERS
Input Capacitance
CISS
324
455
pF
Output Capacitance
COSS
35
50
pF
Reverse Transfer Capacitance
CRSS
VGS =0 V, VDS =25 V, f=1.0MHz
110
155
pF
SWITCHING PARAMETERS
(Note 2)
Turn-ON Delay Time
tD(ON)
9.4
20
ns
Turn-ON Rise Time
tR
14
30
ns
Turn-OFF Delay Time
tD(OFF)
21
45
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDD=30V, ID =3.0A ,
RG =9.1Ω (Note 1)
13
30
ns
Total Gate Charge
QG
10.6
22
nC
Gate-Source Charge
QGS
1.9
nC
Gate-Drain Charge
QGD
VGS =10V, VDS =48V, ID =3.0A
(Note 1)
4.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V, IS=3.0A
0.89
1.0
V
tRR
30
ns
tA
22
ns
Body Diode Reverse Recovery Time
tB
8.6
ns
Body Diode Reverse Recovery Charge
QRR
VGS=0V, IS=3.0A,
dI/dt=100 A/μs (Note 1)
0.04
nC
Notes: 1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%.
2. Switching characteristics are independent of operating junction temperatures.


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