GSC355-HYB2150 datasheet(9/17 Pages) FREESCALE

부품명	GSC355-HYB2150

상세설명	RF LDMOS Wideband Integrated Power Amplifiers

Download	17 Pages

Scroll/Zoom	100%

제조업체	FREESCALE [Freescale Semiconductor, Inc]

홈페이지	http://www.freescale.com

Logo

9 / 17 page

MD7IC2251NR1 MD7IC2251GNR1

9

RF Device Data

Freescale Semiconductor, Inc.

VDD =28 Vdc,IDQ1(A+B) =80 mA, IDQ2A = 260 mA, CW

f

(MHz)

Zin

(Ω)

Zload (1)

(Ω)

Max Output Power

P1dB

P3dB

(dBm)

(W)

PAE (%)

(dBm)

(W)

PAE (%)

2110

68.0 – j42.0

7.20 – j14.0

45.8

38

52.2

46.4

44

53.1

2140

60.6 – j37.0

7.40 – j14.4

45.7

37

51.9

46.4

44

52.7

2170

54.0 – j31.0

7.30 – j14.7

45.7

37

51.6

46.4

44

52.2

(1) Load impedance for optimum P1dB power.

Zin

= Impedance as measured from input contact to ground.

Zload = Impedance as measured from drain contact to ground.

Figure 12. Carrier Side Load Pull Performance — Maximum P1dB Tuning

Device

Under

Test

Output

Load Pull

Tuner

Zin

Zload

VDD =28 Vdc,IDQ1(A+B) =80 mA, IDQ2A = 260 mA, CW

f

(MHz)

Zin

(Ω)

Zload (1)

(Ω)

Max Power Added Efficiency

P1dB

P3dB

(dBm)

(W)

PAE (%)

(dBm)

(W)

PAE (%)

2110

60.0 – j53.0

9.10 – j8.80

44.4

28

58.1

45.0

32.0

57.6

2140

54.0 – j46.0

8.20 – j9.10

44.4

28

57.6

44.9

31.0

57.0

2170

48.0 – j39.0

7.90 – j9.60

44.4

28

57.4

45.0

32.0

56.7

(1) Load impedance for optimum P1dB efficiency.

Zin

= Impedance as measured from input contact to ground.

Zload = Impedance as measured from drain contact to ground.

Figure 13. Carrier Side Load Pull Performance — Maximum Power Added Efficiency Tuning

Device

Under

Test

Output

Load Pull

Tuner

Zin

Zload

유사한 부품 번호 - GSC355-HYB2150

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	GSC355-HYB2150	784Kb / 17P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 5/2012

More results

유사한 설명 - GSC355-HYB2150

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MW4IC2230	660Kb / 12P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MW7IC3825NR1	808Kb / 23P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MDE6IC7120NR1	512Kb / 18P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	MMRF2007N	403Kb / 17P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 6/2015
	MD7IC2012N	351Kb / 19P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 4/2013
	A2I25H060N	1Mb / 31P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 1/2016
Freescale Semiconductor...	MW7IC2725NR1	960Kb / 24P	RF LDMOS Wideband Integrated Power Amplifiers
Freescale Semiconductor...	MW7IC3825NR1	1Mb / 23P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	MDE6IC7120N	576Kb / 18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 0, 10/2009
NXP Semiconductors	MW4IC2020N	693Kb / 16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006

More results

GSC355-HYB2150 데이터시트(PDF) 9 Page - Freescale Semiconductor, Inc

GSC355-HYB2150 데이터시트(HTML) 9 Page - Freescale Semiconductor, Inc

유사한 부품 번호 - GSC355-HYB2150

유사한 설명 - GSC355-HYB2150

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

데이터시트 다운로드

링크 URL