1

D

2

D

3

D

4

D

D

5

G

6

S

7

S

8

S

P0095-01

0

2

4

6

8

10

12

14

16

18

20

2

4

6

8

10

12

G006

0

2

4

6

8

10

12

0

2

4

6

8

10

G003

CSD16409Q3

www.ti.com

SLPS204A – AUGUST 2009 – REVISED MAY 2010

N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD16409Q3

1

FEATURES

PRODUCT SUMMARY

2

•

Drain to Source Voltage

25

V

•

Low Thermal Resistance

Gate Charge Total (4.5V)

4

nC

•

Avalanche Rated

Gate Charge Gate to Drain

1

nC

•

Pb Free Terminal Plating

9.5

m

Ω

Drain to Source On Resistance

6.2

m

Ω

•

RoHS Compliant

Threshold Voltage

2

V

•

Halogen Free

•

SON 3.3mm x 3.3mm Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

SON 3.3 × 3.3

13-inch

Tape and

CSD16409Q3

2500

•

Point-of-Load Synchronous Buck Converter

Plastic Package

reel

Reel

for Applications in Networking, Telecom and

Computing Systems

ABSOLUTE MAXIMUM RATINGS

•

Optimized for Control FET Applications

VALUE

UNIT

Drain to Source Voltage

25

V

DESCRIPTION

Gate to Source Voltage

+16 / –12

V

The NexFET™ power MOSFET has been designed

60

A

to minimize losses in power conversion applications.

Continuous Drain Current(1)

15

A

(2)

90

A

Top View

Power Dissipation(1)

2.6

W

Operating Junction and Storage

–55 to 150

°C

Temperature Range

Avalanche Energy, single pulse

72

mJ

(2) Pulse width

≤300ms, duty cycle ≤2%

Gate Charge

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Copyright © 2009–2010, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.