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CSD16413Q5A 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD16413Q5A 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 11 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 VGS − Gate to Source Voltage − V 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 G006 ID = 24A TC = 125°C TC = 25°C Qg − Gate Charge − nC 0 2 4 6 8 10 12 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 G003 ID = 24A VDS = 12.5V CSD16413Q5A www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFET Check for Samples: CSD16413Q5A 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V • Low Thermal Resistance Qg Gate Charge Total (4.5V) 9 nC • Avalanche Rated Qgd Gate Charge Gate to Drain 2.5 nC • Pb Free Terminal Plating VGS = 4.5V 4.1 m Ω RDS(on) Drain to Source On Resistance VGS = 10V 3.1 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.6 V • Halogen Free • SON 5mm × 6mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5 × 6 Plastic Tape and CSD16413Q5A 13-inch reel 2500 • Point-of-Load Synchronous Buck Converter Package Reel for Applications in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS • Optimized for Control or Synchronous FET TA = 25°C unless otherwise stated VALUE UNIT Applications VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V DESCRIPTION Continuous Drain Current, TC = 25°C 100 A ID The NexFET™ power MOSFET has been designed Continuous Drain Current(1) 24 A to minimize losses in power conversion applications. IDM Pulsed Drain Current, TA = 25°C (2) 156 A PD Power Dissipation(1) 3.1 W Top View TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 106 mJ ID = 46A, L = 0.1mH, RG = 25Ω (1) RqJA = 41°C/W on 1in 2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300ms, duty cycle ≤2% RDS(ON) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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