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LM3447MT 데이터시트(PDF) 4 Page - Texas Instruments |
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LM3447MT 데이터시트(HTML) 4 Page - Texas Instruments |
4 / 25 page LM3447 SNOSC65 A – APRIL 2012 – REVISED MAY 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Unless otherwise specified –40°C < TJ = TA < 125°C, VCC = 14V, VTSNS = 1.75V, VFLT2 = 1.75V, VAUX = 0.5V, VINV = 0V, SP IVAC = 100μA, IBIAS = 100μA, CVCC = 10μF, CCOMP = 0.047μF, RHLD = 10kΩ. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CURRENT SENSE COMPARATOR (ISNS) ISNS(TH) Current limit threshold 239 275 305 mV RISNS(LEB) ISNS pull down impedance 1.13 k Ω tISNS(LEB) Leading edge blanking time 170 ns ERROR AMPLIFIER (INV, COMP) VREF Reference voltage VFLT2 = 1.5 V, VTSNS = 1.75 V 0.95 1 1.05 V IINV(BIAS) Input bias current VINV = VREF 45 nA GM Transconductance VCOMP = VREF 100 μmho Current source capacity VINV = 0 V 77 104 μA ICOMP Current sink capacity VINV = 2V 50 77 μA COMP(LOW) Minimum PWM ramp voltage IVAC = 110 μA, VINV = 1 V 280 mV D(MAX) Maximum duty cycle IVAC = 110 μA, VINV = 0 V 76.5% VALLEY DETECT CIRCUIT (AUX) AUX(OVP) Overvoltage protection VAUX rising 1.67 1.75 1.83 V tAUX(LEB) AUX leading edge blanking 1.84 μs IAUX(SOURCE) AUX source current VAUX = –0.3 V 207 μA tAUX(TO) Valley detect timeout VAUX = 1 V 4 μs PWM OSCILLATOR AND FAULT TIMER tOSC Oscillator period 13.9 14.5 15.1 μs tFAULT Fault timer 812 ms THERMAL FOLDBACK (TSNS) TSNS(OC) Open circuit voltage 1.67 1.75 1.83 V TSNS(TH) Thermal foldback threshold VTSNS falling 0.955 1 1.045 V RTSNS (1) Internal pull-up resistor TJ = 25°C 7.09 7.88 8.67 k Ω THERMAL SHUTDOWN TSD(TH) (2) Thermal shutdown temperature 165 °C TSD(HYS) (2) Thermal shutdown hysteresis 25 °C (1) Resistance varies with junction temperature and has typical temperature coefficient of 25ppm/°C. (2) Device performance at or near thermal shutdown temperature is not specified or assured. 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: LM3447 |
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