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TLC2274AQPWRG4Q1 데이터시트(PDF) 2 Page - Texas Instruments |
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TLC2274AQPWRG4Q1 데이터시트(HTML) 2 Page - Texas Instruments |
2 / 39 page Q3 Q6 Q9 Q12 Q14 Q16 Q2 Q5 Q7 Q8 Q10 Q11 D1 Q17 Q15 Q13 Q4 Q1 R5 C1 VDD+ IN + IN − R3 R4 R1 R2 OUT VDD− TLC2272-Q1 , TLC2272A-Q1 TLC2274-Q1, TLC2274A-Q1 SGLS007E – FEBRUARY 2003 – REVISED JANUARY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. AVAILABLE OPTIONS PACKAGED DEVICES(1)(2) TA VIOmax At 25°C SMALL OUTLINE (D) TSSOP (PW) 950 μV TLC2272AQDRQ1 TLC2272AQPWRQ1 -40 °C to 125°C 2.5 mV TLC2272QDRQ1 TLC2272QPWRQ1 950 μV TLC2274AQDRQ1 TLC2274AQPWRQ1 -40 °C to 125°C 2.5 mV TLC2274QDRQ1 TLC2274QPWRQ1 (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. (2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. Equivalent Schematic (Each Amplifier) 2 Submit Documentation Feedback Copyright © 2003–2012, Texas Instruments Incorporated Product Folder Link(s): TLC2272-Q1 TLC2272A-Q1 TLC2274-Q1 TLC2274A-Q1 |
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