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SST30VR023 데이터시트(PDF) 3 Page - Silicon Storage Technology, Inc |
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SST30VR023 데이터시트(HTML) 3 Page - Silicon Storage Technology, Inc |
3 / 12 page Data Sheet 2 Mbit ROM + 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR021 / SST30VR022 / SST30VR023 3 ©2001 Silicon Storage Technology, Inc. S71135-02-000 4/01 380 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Voltage on Any Pin Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD + 0.5V Voltage on VDD Supply Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 4.0V Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Soldering Temperature (10 Seconds Lead Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C OPERATING RANGE Range Ambient Temp VDD Commercial 0°C to +70°C 2.7-3.3V Extended -20°C to +85°C 2.7-3.3V AC CONDITIONS OF TEST Input Pulse Level . . . . . . . . . . . . . . . . . . . . . . . . 0-VDD Input & Output Timing Reference Levels . . . . . . . VDD/2 Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CL = 30 pF for 70 ns Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CL = 100 pF for 500 ns TABLE 2: RECOMMENDED DC OPERATING CONDITIONS Symbol Parameter Min Max Units VDD Supply Voltage 2.7 3.3 V VSS Ground 0 0 V VIH Input High Voltage 2.4 VDD + 0.5 V VIL Input Low Voltage -0.3 0.3 V T2.0 380 TABLE 3: DC OPERATING CHARACTERISTICS Symbol Parameter VDD = 3.0 ± 0.3V Test Conditions Min Max Units IDD1 ROM Operating Supply Current 4.0+1.1(f)1 1. f = Frequency of operation (MHz) = 1/cycle time mA ROMCS#=VIL, RAMCS#=VIH, VIN=VIH or VIL, II/O=Opens IDD2 RAM Operating Supply Current 2.5+1(f)1 mA ROMCS#=VIH, RAMCS#=VIL, II/O=Opens ISB Standby VDD Current 10 µA ROMCS# ≥VDD-0.2V, RAMCS#≥VDD-0.2V VIN≥VDD-0.2V or VIN ≤0.2V ILI Input Leakage Current -1 1 µA VIN=VSS to VDD ILO Output Leakage Current -1 1 µA ROMCS#=RAMCS#=VIH or OE#=VIH or WE#=VIL, VI/O=VSS to VDD VOL Output Low Voltage 0.4 V IOL = 1.0 mA VOH Output High Voltage 2.2 V IOH = -0.5 mA T3.3 380 |
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