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SST31LF041 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST31LF041 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 26 page ©2001 Silicon Storage Technology, Inc. S71107-03-000 5/01 349 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. ComboMemory are trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet FEATURES: • Monolithic Flash + SRAM ComboMemory – SST31LF041/041A: 512K x8 Flash + 128K x8 SRAM – SST31LF043/043A: 512K x8 Flash + 32K x8 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while Erase/Program Flash • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical) • Flash Sector-Erase Capability – Uniform 4 KByte sectors • Latched Address and Data for Flash • Fast Read Access Times: – SST31LF041/043 Flash: 70 ns SRAM: 70 ns – SST31LF041A/043A Flash: 300 ns SRAM: 300 ns • Flash Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Bank-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Bank Rewrite Time: 8 seconds (typical) • Flash Automatic Erase and Program Timing – Internal VPP Generation • Flash End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Packages Available – 32-lead TSOP (8 x 14 mm) SST31LF041A/043A – 40-lead TSOP (10 x 14 mm) SST31LF041/043 PRODUCT DESCRIPTION The SST31LF041/041A/043/043A devices are a 512K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technol- ogy. The SST31LF041/041A/043/043A devices write (SRAM or flash) with a 3.0-3.6V power supply. The mono- lithic SST31LF041/041A/043/043A devices conform to Software Data Protect (SDP) commands for x8 EEPROMs. Featuring high performance Byte-Program, the flash mem- ory bank provides a maximum Byte-Program time of 20 µsec. The entire flash memory bank can be erased and programmed byte-by-byte in typically 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent flash write, the SST31LF041/041A/ 043/043A devices have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST31LF041/041A/043/043A devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST31LF041/041A/043/043A operate as two inde- pendent memory banks with respective bank enable sig- nals. The SRAM and Flash memory banks are superimposed in the same memory address space. Both memory banks share common address lines, data lines, WE# and OE#. The memory bank selection is done by memory bank enable signals. The SRAM bank enable sig- nal, BES# selects the SRAM bank and the flash memory bank enable signal, BEF# selects the flash memory bank. The WE# signal has to be used with Software Data Protec- tion (SDP) command sequence when controlling the Erase and Program operations in the flash memory bank. The SDP command sequence protects the data stored in the flash memory bank from accidental alteration. The SST31LF041/041A/043/043A provide the added func- tionality of being able to simultaneously read from or write to the SRAM bank while erasing or programming in the flash memory bank. The SRAM memory bank can be read or written while the flash memory bank performs Sector- Erase, Bank-Erase, or Byte-Program concurrently. All flash memory Erase and Program operations will automatically latch the input address and data signals and complete the operation in background without further input stimulus requirement. Once the internally controlled Erase or Pro- gram cycle in the flash bank has commenced, the SRAM bank can be accessed for Read or Write. The SST31LF041/041A/043/043A devices are suited for applications that use both nonvolatile flash memory and volatile SRAM memory to store code or data. For all sys- tem applications, the SST31LF041/041A/043/043A 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A SST31LF041 / 041A4Mb Flash (x8) + 1 Mb SRAM (x8) ComboMemories |
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