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SST31LF021E-300-4C-WH 데이터시트(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST31LF021E-300-4C-WH 데이터시트(HTML) 10 Page - Silicon Storage Technology, Inc |
10 / 24 page 10 Data Sheet 2 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF021 / SST31LF021E ©2001 Silicon Storage Technology, Inc. S71137-03-000 10/01 392 TABLE 12: FLASH PROGRAM/ERASE CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V) Symbol Parameter SST31LF021-70 SST31LF021E-300 Units Min Max Min Max TBP Byte-Program Time 20 20 µs TAS Address Setup Time 0 0 ns TAH Address Hold Time 30 50 ns TBS WE# and BEF# Setup Time 0 0 ns TBH WE# and BEF# Hold Time 0 0 ns TOES OE# High Setup Time 0 0 ns TOEH OE# High Hold Time 10 10 ns TBP BEF# Pulse Width 40 100 ns TWP WE# Pulse Width 40 100 ns TWPH WE# Pulse Width High 30 50 ns TBPH BEF# Pulse Width High 30 50 ns TDS Data Setup Time 40 50 ns TDH Data Hold Time 0 0 ns TIDA Software ID Access and Exit Time 150 150 ns TSE Sector-Erase 25 25 ms TSBE Bank-Erase 100 100 ms TBS Bank Enable Setup Time for Concurrent Operation 0 0 ns T12.3 392 |
유사한 부품 번호 - SST31LF021E-300-4C-WH |
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유사한 설명 - SST31LF021E-300-4C-WH |
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