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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST28SF040A-120-4I-NH 데이터시트(PDF) 8 Page - Silicon Storage Technology, Inc |
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SST28SF040A-120-4I-NH 데이터시트(HTML) 8 Page - Silicon Storage Technology, Inc |
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8 / 24 page  8 Data Sheet 4 Mbit SuperFlash EEPROM SST28SF040A / SST28VF040A ©2001 Silicon Storage Technology, Inc. S71077-04-000 6/01 310 TABLE 6: DC OPERATING CHARACTERISTICS FOR SST28SF040A Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VIL/VIH, at f=1/TRC Min, VDD=VDD Max Read 32 mA CE#=OE#=VIL, WE#=VIH, all I/Os open Program and Erase 40 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max ISB1 Standby VDD Current (TTL input) 3mA CE#=VIH, VDD=VDD Max ISB2 Standby VDD Current (CMOS input) 20 µA CE#=VDD-0.3V, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 2.0 V VDD=VDD Max VOL Output Low Voltage 0.4 V IOL=2.1 mA, VDD=VDD Min VOH Output High Voltage 2.4 V IOH=-400 µA, VDD=VDD Min VH Supervoltage for A9 11.6 12.4 V CE#=OE#=VIL, WE#=VIH IH Supervoltage Current for A9 200 µA CE#=OE#=VIL, WE#=VIH, A9=VH Max T6.4 310 TABLE 7: DC OPERATING CHARACTERISTICS FOR SST28VF040A Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VIL/VIH, at f=1/TRC Min, VDD=VDD Max Read 10 mA CE#=OE#=VIL, WE#=VIH, all I/Os open Program and Erase 25 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max ISB2 Standby VDD Current (CMOS input) 20 µA CE#=OE#=WE#=VDD-0.3V, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 2.0 V VDD=VDD Max VOL Output Low Voltage 0.4 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage 2.4 V IOH=-100 µA, VDD=VDD Min VH Supervoltage for A9 11.6 12.4 V CE#=OE#=VIL, WE#=VIH IH Supervoltage Current for A9 200 µA CE#=OE#=VIL, WE#=VIH, A9=VH Max T7.4 310 |
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