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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST39LF160-70-4I-EK 데이터시트(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST39LF160-70-4I-EK 데이터시트(HTML) 10 Page - Silicon Storage Technology, Inc |
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10 / 26 page  10 Data Sheet 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 ©2001 Silicon Storage Technology, Inc. S71145-02-000 6/01 399 TABLE 8: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST39LF160 AND 2.7-3.6V FOR SST39VF160 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VIL/VIH, at f=1/TRC Min., VDD=VDD Max. Read 20 mA CE#=OE#=VIL,WE#=VIH, all I/Os open Program and Erase 25 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 20 µA CE#=VIHC, VDD=VDD Max. IALP Auto Low Power Current 20 µA CE#=VIHC, VDD=VDD Max., all inputs = VIHC or VILC, WE#=VIHC ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max. ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max. VIL Input Low Voltage 0.8 V VDD=VDD Min. VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max. VIH Input High Voltage 0.7 VDD VVDD=VDD Max. VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max. VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min. VOH Output High Voltage VDD-0.2 V IOH = -100 µA, VDD=VDD Min. T8.3 399 TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T9.0 399 TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T10.0 399 TABLE 11: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T11.1 399 |
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