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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SST31LF041A-300-4E-WH 데이터시트(PDF) 9 Page - Silicon Storage Technology, Inc |
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SST31LF041A-300-4E-WH 데이터시트(HTML) 9 Page - Silicon Storage Technology, Inc |
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9 / 26 page  Data Sheet 4 Mbit Flash + 1 Mbit or 256 Kbit SRAM ComboMemory SST31LF041 / SST31LF041A / SST31LF043 / SST31LF043A 9 ©2001 Silicon Storage Technology, Inc. S71107-03-000 5/01 349 TABLE 5: DC OPERATING CHARACTERISTICS (VDD = 3.0-3.6V) Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input = VIL/VIH, at f=1/TRC Min, VDD=VDD Max, all DQs open Read Flash 12 mA OE#=VIL, WE#=VIH BEF#=VIL, BES#=VIH SRAM 40 mA BEF#=VIH, BES#=VIL Concurrent Operation 55 mA BEF#=VIH, BES#=VIL Write Flash (Program) 15 mA OE#=VIH, WE#=VIL BEF#=VIL, BES#=VIH SRAM 40 mA BEF#=VIH, BES#=VIL ISB1 Standby VDD Current 30 µA BEF#=BES#=VIHC, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 1 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.4 V VDD = VDD Min VIH Input High Voltage 0.7VDD VVDD = VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD = VDD Max VOL Output Low Voltage 0.2 V IOL = 100 µA, VDD = VDD Min VOH Output High Voltage VDD-0.2 V IOH = -100 µA, VDD = VDD Min VH Supervoltage for A9 pin 11.4 12.6 V BEF#=OE#=VIL, WE#=VIH IH Supervoltage Current for A9 pin 200 µA BEF#=OE#=VIL, WE#=VIH, A9=VH Max T5.14 349 1. Specification applies to commercial temperature devices only. This parameter may be higher for extended devices. TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T6.2 349 TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T7.2 349 TABLE 8: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T8.4 349 |
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