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SST39LF160-70-4C-B3K 데이터시트(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST39LF160-70-4C-B3K 데이터시트(HTML) 11 Page - Silicon Storage Technology, Inc |
11 / 26 page Data Sheet 16 Mbit Multi-Purpose Flash SST39LF160 / SST39VF160 11 ©2001 Silicon Storage Technology, Inc. S71145-02-000 6/01 399 AC CHARACTERISTICS TABLE 12: READ CYCLE TIMING PARAMETERS VDD = 3.0-3.6V FOR SST39LF160 AND 2.7-3.6V FOR SST39VF160 Symbol Parameter SST39LF160-55 SST39VF160-70 SST39VF160-90 Units Min Max Min Max Min Max TRC Read Cycle Time 55 70 90 ns TCE Chip Enable Access Time 55 70 90 ns TAA Address Access Time 55 70 90 ns TOE Output Enable Access Time 30 35 45 ns TCLZ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. CE# Low to Active Output 0 0 0 ns TOLZ1 OE# Low to Active Output 0 0 0 ns TCHZ1 CE# High to High-Z Output 15 20 30 ns TOHZ1 OE# High to High-Z Output 15 20 30 ns TOH1 Output Hold from Address Change 0 0 0 ns T12.2 399 TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter Min Max Units TBP Word-Program Time 20 µs TAS Address Setup Time 0 ns TAH Address Hold Time 30 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. WE# Pulse Width High 30 ns TCPH1 CE# Pulse Width High 30 ns TDS Data Setup Time 30 ns TDH1 Data Hold Time 0 ns TIDA1 Software ID Access and Exit Time 150 ns TSE Sector-Erase 25 ms TBE Block-Erase 25 ms TSCE Chip-Erase 100 ms T13.0 399 |
유사한 부품 번호 - SST39LF160-70-4C-B3K |
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유사한 설명 - SST39LF160-70-4C-B3K |
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