©2001 Silicon Storage Technology, Inc.

S71149-03-000

4/01

394

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The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

512 Kbit / 1 Mbit (x8) Multi-Purpose Flash

SST39SF512 / SST39SF010

FEATURES:

•

Organized as 64K x8 / 128K x8

•

Single 5.0V Read and Write Operations

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

•

Sector-Erase Capability

– Uniform 4 KByte sectors

•

Fast Read Access Time:

– 70 ns

– 90 ns

•

Latched Address and Data

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 7 ms (typical)

– Chip-Erase Time: 15 ms (typical)

– Byte-Program Time: 20 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39SF512

3 seconds (typical) for SST39SF010

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bit

– Data# Polling

•

TTL I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pinouts and command sets

•

Packages Available

– 32-pin PLCC

– 32-pin TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST39SF512/010 are CMOS Multi-Purpose Flash

(MPF) manufactured with SST’s proprietary, high perfor-

mance CMOS SuperFlash technology. The split-gate cell

design and thick oxide tunneling injector attain better reli-

ability and manufacturability compared with alternate

approaches. The SST39SF512/010 devices write (Pro-

gram or Erase) with a 5.0V-only power supply. The

SST39SF512/010 device conforms to JEDEC standard

pinouts for x8 memories.

Featuring

high

performance

Byte-Program,

the

SST39SF512/010 devices provide a maximum Byte-Pro-

gram time of 30 µsec. These devices use Toggle Bit or

Data# Polling to indicate the completion of Program opera-

tion. To protect against inadvertent write, they have on-chip

hardware

and

Software

Data

Protection

schemes.

Designed, manufactured, and tested for a wide spectrum of

applications, these devices are offered with a guaranteed

endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

The SST39SF512/010 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during erase and program than alter-

native flash technologies. The total energy consumed is a

function of the applied voltage, current, and time of applica-

tion. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter

erase time, the total energy consumed during any Erase or

Program operation is less than alternative flash technolo-

gies. These devices also improve flexibility while lowering

the cost for program, data, and configuration storage appli-

cations.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF512/010 are offered in 32-pin PLCC packages,

32-pin TSOP, and a 600 mil, 32-pin PDIP is also available.

See Figures 1, 2, and 3 for pinouts.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

SST39SF512 / 0105.0V 512Kb / 1Mb (x8) MPF memories