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SST39VF016-70-4I-EK 데이터시트(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39VF016-70-4I-EK 데이터시트(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 26 page Data Sheet ©2001 Silicon Storage Technology, Inc. S71146-03-000 6/01 396 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 FEATURES: • Organized as 1M x8 / 2M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080/016 – 2.7-3.6V for SST39VF080/016 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – 55 ns for SST39LF080/016 – 70 and 90 ns for SST39VF080/016 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF080 30 seconds (typical) for SST39LF/VF016 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 40-lead TSOP (10mm x 20mm) – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manu- factured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufac- turability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF/ VF080 and SST39LF/VF016 devices provide a typical Byte-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39LF/VF080 and SST39LF/VF016 devices are suited for applications that require convenient and econom- ical updating of program, configuration, or data memory. For all system applications, they significantly improve per- formance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy con- sumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. They also improve flexibility while lower- ing the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Pro- gram cycles. To meet high density, surface mount requirements, the SST39LF/VF080 and SST39LF/VF016 are offered in 40- lead TSOP and 48-ball TFBGA packaging. See Figures 1 and 2 for pinouts. SST39LF/VF080 / 0163.0 & 2.7V 8Mb / 16Mb (x8) MPF memories |
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