TPIC5621L

SIXOUTPUT POWER DMOS ARRAY

SLIS033 − JUNE 1994

4

POST OFFICE BOX 655303

POST OFFICE BOX 1443

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Turn-on delay time

9

18

td(off)

Turn-off delay time

VDD = 25 V,

RL = 50 Ω,

ten = 10 ns,

20

40

ns

tr

Rise time

VDD = 25 V,

tdis = 10 ns,

RL = 50 Ω,

See Figure 2

ten = 10 ns,

21

42

ns

tf

Fall time

tdis = 10 ns,

See Figure 2

25

50

Qg

Total gate charge

VDS = 48 V,

ID = 0.5 A,

VGS = 5 V,

3.1

3.7

Qgs(th) Threshold gate-to-source charge

VDS = 48 V,

See Figure 3

ID = 0.5 A,

VGS = 5 V,

0.5

0.6

nC

Qgd

Gate-to-drain charge

See Figure 3

1.9

2.3

nC

LD

Internal drain inductance

5

nH

LS

Internal source inductance

5

nH

Rg

Internal gate resistance

0.25

Ω

thermal resistance

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance (see Note 4)

All outputs with equal power

90

°C/W

RθJC Junction-to-case thermal resistance

All outputs with equal power

27

°C/W

NOTE 4: Package mounted on an FR4 printed-circuit board with no heat sink

PARAMETER MEASUREMENT INFORMATION

Reverse di/dt = 100 A/

µs

trr

VDS = 48 V

VGS = 0

TJ = 25°C

Z1, Z2, Z3

25% of IRM†

Shaded Area = QRR

t − Time − ns

0

50

100

150

200

250

300

1.5

1

0.5

0

− 0.5

− 1

− 1.5

− 2

− 2.5

350

400

450

500

IRM†

† IRM = maximum recovery current

NOTE A: The above waveform is representative of Z4, Z5, Z6, D1, D2, and D3 in shape only.

Figure 1. Reverse-Recovery-Current Waveform of Source-to-Drain Diode