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TC7SET02FU 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 TC7SET02FU
상세설명  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TC7SET02F/FU
2009-09-30
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SET02F,TC7SET02FU
2 Input NOR Gate
Features
• High speed
: tpd = 4.2 ns (typ.)
at VCC = 5 V, CL = 15pF
• Low power dissipation
: ICC = 2 μA (max) at Ta = 25°C
• Compatible with TTL outputs : VIL = 0.8 V (max)
VIH = 2.0 V (min)
• 5.5-V tolerant inputs
• Balanced Propagation Delays : tpLH ≒ tpHL
Marking
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: VOUT <GND, VOUT > VCC
TC7SET02F
TC7SET02FU
Weight
SSOP5-P-0.95
: 0.016 g (typ.)
SSOP5-P-0.65A : 0.006 g (typ.)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20 (Note 1)
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
200
mW
Storage temperature
Tstg
−65 to 150
°C
Lead temperature (10s)
TL
260
°C
Pin Assignment
(t
i
)
Product name
G 3
5 VCC
4 OUT Y
GND 3
IN A 2
IN B 1
(SMV)
(USV)


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