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TC7SG34FE 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TC7SG34FE 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TC7SG34FE 2009-09-09 4 AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns) Ta = 25°C Ta = −40 to 85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 0.9 ⎯ 18.6 ⎯ ⎯ ⎯ 1.1 to 1.3 ⎯ 8.7 18.4 1.0 34.2 1.4 to 1.6 ⎯ 4.9 8.5 1.0 10.0 1.65 to 1.95 ⎯ 3.8 6.2 1.0 6.7 2.3 to 2.7 ⎯ 2.6 3.9 1.0 4.4 CL = 10 pF, RL = 1 MΩ 3.0 to 3.6 ⎯ 2.1 3.1 1.0 3.7 0.9 ⎯ 21.0 ⎯ ⎯ ⎯ 1.1 to 1.3 ⎯ 9.8 21.5 1.0 37.1 1.4 to 1.6 ⎯ 5.4 9.3 1.0 11.2 1.65 to 1.95 ⎯ 4.2 6.9 1.0 7.1 2.3 to 2.7 ⎯ 2.8 4.4 1.0 5.0 CL = 15 pF, RL = 1 MΩ 3.0 to 3.6 ⎯ 2.3 3.4 1.0 3.9 0.9 ⎯ 31.2 ⎯ ⎯ ⎯ 1.1 to 1.3 ⎯ 13.8 29.6 1.0 56.0 1.4 to 1.6 ⎯ 7.4 13.1 1.0 15.9 1.65 to 1.95 ⎯ 5.6 9.2 1.0 9.6 2.3 to 2.7 ⎯ 3.7 5.7 1.0 6.1 Propagation delay time tpLH tpHL CL = 30 pF, RL = 1 MΩ 3.0 to 3.6 ⎯ 2.9 4.4 1.0 4.8 ns Input capacitance CIN ⎯ 3.6 ⎯ 3 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD (Note 13) 0.9 to 3.6 ⎯ 6 ⎯ ⎯ ⎯ pF Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr.) = CPD・VCC・fIN + ICC |
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