TC7SH00F/FU

2009-09-09

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SH00F, TC7SH00FU

2-Input NAND Gate

Features

• 5.5-V tolerant inputs

Marking

Characteristics

Symbol

Rating

Unit

Supply voltage

− 0.5 to 7.0

V

DC input voltage

− 0.5 to 7.0

V

DC output voltage

V

Input diode current

− 20

mA

Output diode current

± 20 (Note 1)

mA

DC output current

± 25

mA

± 50

mA

Power dissipation

200

mW

Storage temperature

− 65 to 150

°C

Lead temperature (10s)

260

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

TC7SH00F

(SMV)

TC7SH00FU

(USV)

Weight

SSOP5-P-0.95

: 0.016 g (typ.)

SSOP5-P-0.65A

: 0.006 g (typ.)

Product name

H 1

4

OUT Y

IN A

2

GND

3

IN B

1