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SSM5H06FE 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
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SSM5H06FE 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page SSM5H06FE 2007-11-01 3 MOSFET Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA Drain-Source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA, VGS = 4 V ⎯ 1.5 3.0 ID = 10 mA, VGS = 2.5 V ⎯ 2.2 4.0 Drain-Source on-resistance RDS (ON) ID = 1 mA, VGS = 1.5 V ⎯ 5.2 15 Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.3 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 4.5 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 9.8 ⎯ pF Turn-on time ton ⎯ 70 ⎯ Switching time Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 125 ⎯ ns Switching Time Test Circuit Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. (c) VOUT (b) VIN ton 90% 10% 0 V 2.5 V 10% 90% toff tr tf VDD VDS (ON) VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD OUT IN 2.5 V 0 10 μs RL (a) Test circuit |
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