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SI8712AC-B-IP 데이터시트(PDF) 11 Page - Silicon Laboratories |
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SI8712AC-B-IP 데이터시트(HTML) 11 Page - Silicon Laboratories |
11 / 36 page Si87xx Preliminary Rev. 0.5 11 Table 9. Absolute Maximum Ratings* Parameter Symbol Min Max Unit Storage Temperature TSTG –65 +150 °C Operating Temperature TA –40 +125 °C Junction Temperature TJ —+140 °C Average Forward Input Current Si87xxA Devices Si87xxB Devices Si87xxC Devices IF(AVG) — — — 15 30 15 mA mA mA Peak Transient Input Current (< 1 µs pulse width, 300 ps) IFTR —1 A Reverse Input Voltage VR –0.3 V Supply Voltage VDD –0.5 36 V Output Voltage VOUT –0.5 36 V Enable Voltage VOUT –0.5 VDD+0.5 V Output Sink Current ISINK —15 mA Average Output Current IO(AVG) —8 mA Peak Output Current (VDD =5V) IOPK —75 mA Input Power Dissipation PI —90 mW Output Power Dissipation PO —50 mW Total Power Dissipation PT —140 mW Lead Solder Temperature (10 s) — 260 °C HBM Rating ESD 3 — kV Machine Model ESD 200 — V CDM 500 — V Maximum Isolation Voltage (1 s) SOIC-8 — 4500 VRMS Maximum Isolation Voltage (1 s) DIP8 — 4500 VRMS Maximum Isolation Voltage (1 s) SDIP6 — 6500 VRMS Maximum Isolation Voltage (1 s) LGA8 — 6500 VRMS *Note: Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions specified in the operational sections of this data sheet. |
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