March 2012

©2012 Fairchild Semiconductor Corporation

FDD390N15ALZ Rev.C1

www.fairchildsemi.com

1

Thermal Characteristics

Symbol

Parameter

Rating

Units

Drain to Source Voltage

150

V

Gate to Source Voltage

±20

V

Drain Current

26

A

17

Drain Current

- Pulsed

(Note 1)

104

A

Single Pulsed Avalanche Energy

(Note 2)

96

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

13

V/ns

Power Dissipation

63

W

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

Min.

Max.

Units

Thermal Resistance, Junction to Case

-

2.0

Thermal Resistance, Junction to Ambient

-

87

FDD390N15ALZ

150V, 26A, 42m

Ω

Features

• Fast Switching Speed

• Low gate charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

•RoHS Compliant

Description

This

N-Channel

MOSFET

is

produced

using

Fairchild

Semiconductor’s advanced PowerTrench process that has been

especially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Application

• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

D-PAK

G

S

D

G

S

D

G

S

D