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FQD1N80 데이터시트(PDF) 2 Page - Fairchild Semiconductor

부품명 FQD1N80
상세설명  800V N-Channel MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD1N80 데이터시트(HTML) 2 Page - Fairchild Semiconductor

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Rev. A3. January 2009
©2009 Fairchild Semiconductor Corporation
Electrical Characteristics T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 170mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 1.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
1.0
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
--
10
µA
VDS = 640 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS= 10V,ID=0.5 A
--
15.5
20
gFS
Forward Transconductance
VDS = 50 V, ID = 0.5 A
--
0.75
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
150
195
pF
Coss
Output Capacitance
--
20
26
pF
Crss
Reverse Transfer Capacitance
--
2.7
3.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 400 V, ID = 1.0 A,
RG = 25 Ω
--
10
30
ns
tr
Turn-On Rise Time
--
25
60
ns
td(off)
Turn-Off Delay Time
--
15
40
ns
tf
Turn-Off Fall Time
--
25
60
ns
Qg
Total Gate Charge
VDS = 640 V, ID = 1.0 A,
VGS = 10 V
--
5.5
7.2
nC
Qgs
Gate-Source Charge
--
1.1
--
nC
Qgd
Gate-Drain Charge
--
3.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
4.0
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.0 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 1.0 A,
dIF / dt = 100 A/µs
--
300
--
ns
Qrr
Reverse Recovery Charge
--
0.6
--
µC


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