2SA1037AKXLT1 datasheet(2/4 Pages) WILLAS

부품명	2SA1037AKXLT1

상세설명	General Purpose Transistors

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제조업체	WILLAS [WILLAS ELECTRONIC CORP]

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–0.2

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

–1.6

T A = 100°C

25°C

– 40°C

–50

–20

–10

–50

–2

–1

–0.5

–0.2

–0.1

0

–0.4

–0.8

–1.2

–1.6

–2.0

T

A = 25°C

–10

–8

–6

–4

–2

0

Fig.1 Grounded emitter propagation characteristics

Fig.2 Grounded emitter output characteristics( )

Fig.3 Grounded emitter output characteristics( )

Fig.4 DC current gain vs. collector current ( )

Fig.5 DC current gain vs. collector current ( )

Fig.6 Collector-emitter saturation voltage vs.

collector current ( )

V

CE

= –10 V

V

BE , BASE TO EMITTER VOLTAGE(V)

V

CE , COLLECTOR TO EMITTER VOLTAGE (V)

–35.0

–31.5

–28.0

–24.5

–21.0

–17.5

–14.0

–10.5

–7.0

–3.5

µA

I B =0

0

–1–2

–3

–4–5

T

A = 25°C

–100

–80

–60

–40

–20

0

V

CE , COLLECTOR TO EMITTER VOLTAGE (V)

–250

–200

–150

500

450

400

350

300

–100

–50

µA

I B =0

T A = 25°C

500

200

100

50

V

CE= –5 V

–3V

–1V

I

C, COLLECTOR CURRENT (mA)

–0.2

–0.5

–1

–2

–5

–10

–20

–50

–100

T A = 100°C

500

200

100

50

V

CE= – 6V

I

C, COLLECTOR CURRENT (mA)

–0.2

–0.5

–1

–2

–5

–10

–20

–50

–100

25°C

–40°C

–1

–0.5

–0.2

–0.1

–0.05

I

C, COLLECTOR CURRENT (mA)

–0.2

–0.5

–1

–2

–5

–10

–20

–50

–100

T A = 25°C

I C /I B = 50

20

10

2012-

WILLAS ELECTRONIC CORP.

General Purpose Transistors

2SA1037AKxLT1

Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

Low power loss, high efficiency.

High current capability, low forward voltage drop.

High surge capability.

Guardring for overvoltage protection.

Ultra high-speed switching.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet environmental standards of

MIL-STD-19500 /228

•

Package outline

Mechanical data

Epoxy : UL94-V0 rated flame retardant

• Case : Molded plastic, SOD-123H

• Terminals :Plated terminals, solderable per MIL-STD-750

,

Method 2026

• Polarity : Indicated by cathode band

• Mounting Position : Any

• Weight : Approximated 0.011 gram

•

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

Dimensions in inches and (millimeters)

SOD-123H

Pb Free Product

1.0A SURFACE MOUNT SCHOTTKY

SOD-123

PACKAGE

WILLAS

BARRIER RECTIFIERS -20V- 200V

FM120-M

THRU

FM1200-M

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive load, derate current by 20%

WILLAS ELECTRONIC CORP.

201

2-06

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

Marking Code

12

13

14

15

16

18

10

115

120

Maximum Recurrent Peak Reverse Voltage

VRRM

Maximum RMS Voltage

VRMS

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200

14

21

28

35

42

56

70

105

140

20

30

40

50

60

80

100

150

200

Volts

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IO

IFSM

1.0

30

Amps

Typical Thermal Resistance (Note 2)

RΘJA

Typical Junction Capacitance (Note 1)

CJ

Operating Temperature Range

TJ

Storage Temperature Range

TSTG

-55 to +125

40

120

- 65 to +175

-55 to +150

℃/W

PF

℃

CHARACTERISTICS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

Maximum Forward Voltage at 1.0A DC

VF

0.50

0.70

0.85

0.9

0.92

Volts

@TA=25℃

0.5

Maximum Average Reverse Current at

Rated DC Blocking Voltage

@TA=125℃

IR

10

mAmps

NOTES:

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

•

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