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MJ10021 데이터시트(PDF) 2 Page - Motorola, Inc |
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MJ10021 데이터시트(HTML) 2 Page - Motorola, Inc |
2 / 8 page MJ10020 MJ10021 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Table 1) MJ10020 (IC = 100 mA, IB = 0) MJ10021 VCEO(sus) 200 250 — — — — Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) ICEV — — — — 0.25 5.0 mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) ICER — — 5.0 mAdc Emitter Cutoff Current (VEB = 2.0 V, IC = 0) IEBO — — 175 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure 13 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 14 ON CHARACTERISTICS (1) DC Current Gain (IC = 15 Adc, VCE = 5.0 V) hFE 75 — 1000 — Collector–Emitter Saturation Voltage (IC = 30 Adc, IB = 1.2 Adc) (IC = 60 Adc, IB = 4.0 Adc) (IC = 30 Adc, IB = 1.2 Adc, TC = 100_C) VCE(sat) — — — — — — 2.2 4.0 2.4 Vdc Base–Emitter Saturation Voltage (IC = 30 Adc, IB = 1.2 Adc) (IC = 30 Adc, IB = 1.2 Adc, TC = 100_C) VBE(sat) — — — — 3.0 3.5 Vdc Diode Forward Voltage (IF = 30 Adc) Vf — 2.5 5.0 Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Cob 175 — 700 pF SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time (VCC = 175 Vdc, IC = 30 A, IB1 = Adc, VBE(off) = 5.0 V, tp = 25 µs Duty Cycle v 2.0%). td — 0.02 0.2 µs Rise Time (VCC = 175 Vdc, IC = 30 A, IB1 = Adc, VBE(off) = 5.0 V, tp = 25 µs Duty Cycle v 2.0%). tr — 0.30 1.0 µs Storage Time IB1 = Adc, VBE(off) = 5.0 V, tp = 25 µs Duty Cycle v 2.0%). ts — 1.0 3.5 µs Fall Time v 2.0%). tf — 0.07 0.5 µs Inductive Load, Clamped (Table 1) Storage Time ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A, VBE(off) = 5 V, TC = 100°C) tsv — 1.2 3.5 µs Crossover Time ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A, VBE(off) = 5 V, TC = 100°C) tc — 0.45 2.0 µs Storage Time (ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A, VBE(off) = 5 V, TC = 25°C) tsv — 0.75 — µs Crossover Time (ICM = 30 A(pk), VCEM = 200 V, IB1 = 1.2 A, VBE(off) = 5 V, TC = 25°C) tc — 0.25 — µs Fall Time VBE(off) = 5 V, TC = 25°C) tfi — 0.15 — µs (1) Pulse Test: PW = 300 µs, Duty Cycle v 2%. |
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