전자부품 데이터시트 검색엔진 |
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TC1606 데이터시트(PDF) 1 Page - Transcom, Inc. |
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TC1606 데이터시트(HTML) 1 Page - Transcom, Inc. |
1 / 4 page TC1606 REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1 / 4 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: G L = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Hole Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BV DGO ≥ 18 V ! Lg = 0.6 µm, Wg = 5 mm ! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1606 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 500 mA 32.5 33 dBm GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 500 mA 11 12 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 6 GHz V DS = 8 V, IDS = 500 mA,*PSCL = 20 dBm 43 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz 43 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 1.2 A gm Transconductance at VDS = 2 V, VGS = 0 V 850 mS VP Pinch-off Voltage at VDS = 2 V, ID = 10 mA -1.7** Volts BVDGO Drain-Gate Breakdown Voltage at IDGO = 2.5 mA 18 22 Volts Rth Thermal Resistance 6 °C/W Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1606’s are divided into 3 groups: (1)TC1606P1519 : Vp = -1.5V to -1.9V (2) TC1606P1620 : Vp = -1.6V to -2.0V (3)TC1606P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. |
유사한 부품 번호 - TC1606 |
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유사한 설명 - TC1606 |
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