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TC1706 데이터시트(PDF) 2 Page - Transcom, Inc.

부품명 TC1706
상세설명  3 W High Linearity and High Efficiency GaAs Power FETs
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제조업체  TRANSCOM [Transcom, Inc.]
홈페이지  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1706 데이터시트(HTML) 2 Page - Transcom, Inc.

  TC1706 Datasheet HTML 1Page - Transcom, Inc. TC1706 Datasheet HTML 2Page - Transcom, Inc. TC1706 Datasheet HTML 3Page - Transcom, Inc. TC1706 Datasheet HTML 4Page - Transcom, Inc.  
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TC1706
REV5_20070502
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2 / 4
ABSOLUTE MAXIMUM RATINGS (TA=25
°°°°C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
12 V
VGS
Gate-Source Voltage
-5 V
IDS
Drain Current
IDSS
Pin
RF Input Power, CW
31.5 dBm
PT
Continuous Dissipation
11.5 W
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
CHIP DIMENSIONS
Units: Micrometers
Chip Thickness: 50
Gate Pad: 76.0 x 59.5
Drain Pad: 86.0 x 76.0
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290
°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220
°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
G
D
D
G
D
G
D
G
D
G
D
G
1510!12
470!12


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