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ACE2342BM+H 데이터시트(PDF) 3 Page - ACE Technology Co., LTD. |
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3 / 8 page ACE2342 N-Channel Enhancement Mode MOSFET VER 1.3 3 Electrical Characteristics (TA=25℃, Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA 20 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA 0.4 1.0 Gate Leakage Current IGSS VDS=0.V, VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA VDS=20V, VGS=0V TJ=55℃ 10 On-State Drain Current ID(ON) VDS≧5V, VGS=4.5V 6 A Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=5.0A 0.026 0.035 Ω VGS=2.5V, ID=4.5A 0.029 0.040 VGS=1.8V, ID=4.0A 0.035 0.048 Forward Transconductance Gfs VDS=15V, ID=5.0A 30 S Diode Forward Voltage VSD IS=-1.0A, VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg VDS=10V, VGS=4.5V, ID≡5.0A 10 13 nC Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 2.1 Input Capacitance Ciss VDS=10V, VGS=0V, f=1MHz 600 pF Output Capacitance Coss 120 Reverse Transfer Capacitance Crss 100 Turn-On Time td(on) VDD=10V, RL=10Ω ID≡1.0A, VGEN=4.5V RG=6Ω 15 25 ns tr 40 60 Turn-Off Time td(off) 45 65 tf 30 40 |
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