전자부품 데이터시트 검색엔진 |
|
MTB09N04H8 데이터시트(PDF) 6 Page - Cystech Electonics Corp. |
|
MTB09N04H8 데이터시트(HTML) 6 Page - Cystech Electonics Corp. |
6 / 10 page CYStech Electronics Corp. Spec. No. : C892H8 Issued Date : 2013.02.01 Revised Date : Page No. : 6/10 MTB09N04H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) ID=30A VDS=20V Maximum Safe Operating Area 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) TA=25°C, Tj=150°C VGS=10V, RθJA=125°C/W Single Pulse DC 100ms RDSON Limited 1s 100μs 1ms 10ms Maximum Drain Current vs CaseTemperature 0 10 20 30 40 50 60 70 25 50 75 100 125 150 175 TC, CaseTemperature(°C) VGS=10V, RθJC=2.5°C/W |
유사한 부품 번호 - MTB09N04H8 |
|
유사한 설명 - MTB09N04H8 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |