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ADG419BN 데이터시트(PDF) 4 Page - Analog Devices

부품명 ADG419BN
상세설명  LC2MOS Precision Mini-DIP Analog Switch
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ADG419BN 데이터시트(HTML) 4 Page - Analog Devices

  ADG419BN Datasheet HTML 1Page - Analog Devices ADG419BN Datasheet HTML 2Page - Analog Devices ADG419BN Datasheet HTML 3Page - Analog Devices ADG419BN Datasheet HTML 4Page - Analog Devices ADG419BN Datasheet HTML 5Page - Analog Devices ADG419BN Datasheet HTML 6Page - Analog Devices ADG419BN Datasheet HTML 7Page - Analog Devices ADG419BN Datasheet HTML 8Page - Analog Devices  
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REV. A
–4–
ADG419
ABSOLUTE MAXIMUM RATINGS
1
(TA= +25°C unless otherwise noted)
VDD to VSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –25 V
VL to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V
Analog, Digital Inputs
2
. . . . . . . . . . . . VSS – 2 V to VDD + 2 V
or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40
°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . . –55
°C to +125°C
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . . 600 mW
θ
JA, Thermal Impedance
. . . . . . . . . . . . . . . . . . . . 110
°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +300
°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . . 400 mW
θ
JA, Thermal Impedance
. . . . . . . . . . . . . . . . . . . . 100
°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . +260
°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . . 400 mW
θ
JA, Thermal Impedance
. . . . . . . . . . . . . . . . . . . . 155
°C/W
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θ
JA, Thermal Impedance
. . . . . . . . . . . . . . . . . . . . 205
°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec). . . . . . . . . . . . . . . . . . . . . . . +215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CD, CS (ON)
“ON” switch capacitance.
tTRANSITION
Delay time between the 50% and 90% points
of the digital inputs and the switch “ON”
condition when switching from one address
state to another.
tD
“OFF” time or “ON” time measured be-
tween the 90% points of both switches
when switching from one address state
to the other.
VINL
Maximum input voltage for logic “0.”
VINH
Minimum input voltage for logic “1.”
IINL (IINH)
Input current of the digital input.
Crosstalk
A measure of unwanted signal which is
coupled through from one channel to
another as a result of parasitic capacitance.
Off Isolation
A measure of unwanted signal coupling
through an “OFF” channel.
IDD
Positive supply current.
ISS
Negative supply current.
TERMINOLOGY
VDD
Most positive power supply potential.
VSS
Most negative power supply potential in dual
supplies. In single supply applications, it
may be connected to GND.
VL
Logic power supply (+5 V).
GND
Ground (0 V) reference.
S
Source terminal. May be an input or an
output.
D
Drain terminal. May be an input or an
output.
IN
Logic control input.
RON
Ohmic resistance between D and S.
IS (OFF)
Source leakage current with the switch
“OFF.”
ID (OFF)
Drain leakage current with the switch
“OFF.”
ID, IS (ON)
Channel leakage current with the switch
“ON.”
VD (VS)
Analog voltage on terminals D, S.
CS (OFF)
“OFF” switch source capacitance.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG419 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE


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