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STF13NM60N 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 21 page This is information on a product in full production. November 2012 Doc ID 15420 Rev 5 1/21 21 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet — production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDSS (@Tjmax) RDS(on) max ID STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N 650 V < 0.36 Ω 11 A TO-220 TO-220FP 1 2 3 TAB 1 2 3 1 2 3 TO-247 1 2 3 I²PAK 3 2 1 IPAK TAB TAB Table 1. Device summary Order codes Marking Packages Packaging STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N 13NM60N TO-220FP I²PAK TO-220 IPAK TO-247 Tube Tube Tube Tube Tube www.st.com |
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