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1 / 21 page June 2011 Doc ID 17432 Rev 2 1/21 21 STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDSS (@Tjmax) RDS(on) max. ID STB28NM50N 550 V < 0.158 Ω 21 A STF28NM50N STP28NM50N STW28NM50N 1 2 3 1 2 3 TO-220FP TO-220 1 3 D²PAK 1 2 3 TO-247 Table 1. Device summary Order codes Marking Package Packaging STB28NM50N 28NM50N D²PAK Tape and reel STF28NM50N TO-220FP Tube STP28NM50N TO-220 STW28NM50N TO-247 www.st.com |
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