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2SC4617TLQ 데이터시트(PDF) 1 Page - Rohm |
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1 / 4 page 1/3 www.rohm.com ○ c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.D ROHM : VMT3 2SC5658 * Denotes hFE 2SC2412K 2SC4617 ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 Abbreviated symbol: B* ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 2SC4081 Abbreviated symbol: B* Abbreviated symbol: B* (1) Base (2) Emitter (3) Collector ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 Abbreviated symbol: B* (1) Emitter (2) Base (3) Collector Each lead has same dimensions 0.3Min. 2.8 1.6 (1) Emitter (2) Base (3) Collector Each lead has same dimensions 1.25 2.1 0.1Min. (1) Emitter (2) Base (3) Collector 0.1Min. 1.6 0.8 (2) (3) (1) (3) 1.2 0.8 0.2 0.15Max. 0.2 (2) (1) General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. Structure Epitaxial planar type NPN silicon transistor Absolute maximum (Ta=25 C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO PC Tj Tstg 60 V V V A W °C °C 50 7 0.15 IC 0.2 0.15 2SC2412K, 2SC4081 2SC4617, 2SC5658 150 −55 to +150 Symbol Limits Unit Electrical characteristics (Ta=25 C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − − − − − − − − 180 2 − − − 0.1 0.1 390 0.4 − 3.5 VIC=50 μA IC=1mA IE=50 μA VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE= −2mA, f=100MHz VCE=12V, IE=0A, f=1MHz V V μA μA − V MHz pF Typ. Max. Unit Conditions Transition frequency |
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