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SI4442DY 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI4442DY 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 www.vishay.com 3 Vishay Siliconix Si4442DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.002 0.004 0.006 0.008 0.010 0 102030405060 VGS = 4.5 V VGS = 2.5 V I - Drain Current (A) D 0 2 4 6 8 10 0 20406080 100 VDS = 15 V ID = 22 A Qg - Total Gate Charge (nC) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 1000 2000 3000 4000 5000 6000 0 6 12 18 24 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 22 A TJ - Junction Temperature (°C) 0.000 0.004 0.008 0.012 0.016 0.020 02468 10 ID = 22 A VGS - Gate-to-Source Voltage (V) |
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