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STP34NM60ND 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STP34NM60ND
상세설명  N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
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Electrical characteristics
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
4/22
Doc ID 18099 Rev 5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage (VGS = 0)
ID = 1 mA
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 14.5 A
0.097
0.110
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
2785
168
5
-
pF
pF
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
43.8
-
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 14.5 A
RG =4.7 Ω, VGS = 10 V
(see Figure 18 and 23)
-
30
53.4
111
61.8
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 29 A,
VGS = 10 V,
(see Figure 19)
-
80.4
16
41.4
-
nC
nC
nC
Rg
Gate input resistance
f=1 MHz , open drain
-
2.87
-
Ω


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