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STP6N120K3 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 17 page This is information on a product in full production. November 2012 Doc ID 15572 Rev 3 1/17 17 STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO-247 packages Datasheet — production data Features ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W STP6N120K3 1200 V < 2.4 Ω 6 A 150 W STW6N120K3 1200 V < 2.4 Ω 6 A 150 W TO-220 TO-247 TO-3PF 1 2 3 1 2 3 1 2 3 TAB D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STFW6N120K3 6N120K3 TO-3PF Tube STP6N120K3 TO-220 STW6N120K3 TO-247 www.st.com |
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