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FDC653N 데이터시트(PDF) 4 Page - Fairchild Semiconductor |
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FDC653N 데이터시트(HTML) 4 Page - Fairchild Semiconductor |
4 / 4 page FDC653N Rev.B Figure 10. Single Pulse Maximum Power Dissipation. 0.1 0.3 1 3 10 30 50 100 200 500 1000 V , DRAIN TO SOURCE VOLTAGE (V) DS f = 1 MHz V = 0V GS Coss Ciss Crss Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical And Thermal Characteristics 0 2 4 6 8 10 12 14 0 2 4 6 8 10 Q , GATE CHARGE (nC) g I = 5.0A D V = 5V DS 10V 15V 0.1 0.2 0.5 1 2 5 10 30 50 0.01 0.03 0.1 0.3 1 3 10 30 V , DRAIN-SOURCE VOLTAGE (V) DS RDS(ON) LIMIT V = 10V SINGLE PULSE R = See Note 1b T = 25°C GS A θJA 1s 100ms 100us DC 10ms 1ms 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) SINGLE PULSE R =See note 1b T = 25°C θJA A 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = See Note 1b θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. |
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