FDD2670 Rev C1(W)

Typical Characteristics

0

3

6

9

12

15

0

5

10

15

20

25

30

35

40

I

V

100 V

70

V

0

500

1000

1500

2000

0

20

406080

100

f = 1MHz

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.001

0.01

0.1

1

10

100

0.1

1

10

100

1000

DC

10s

1s

100ms

100

µs

SINGLE PULSE

10ms

0

20

40

60

80

100

0.01

0.1

1

10

100

1000

SINGLE PULSE

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.01

0.1

1

0.001

0.01

0.1

1

10

100

1000

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.