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FDD3706 데이터시트(PDF) 1 Page - Fairchild Semiconductor

부품명 FDD3706
상세설명  20V N-Channel PowerTrench MOSFET
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제조업체  FAIRCHILD [Fairchild Semiconductor]
홈페이지  http://www.fairchildsemi.com
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April 2002
©2002 Fairchild Semiconductor Corp.
FDD3706/FDU3706 Rev C (W)
FDD3706/FDU3706
20V N-Channel PowerTrench
®
® MOSFET
General Description
This
N-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 50 A, 20 V
RDS(ON) = 9 m
Ω @ V
GS = 10 V
RDS(ON) = 11 m
Ω @ V
GS = 4.5 V
RDS(ON) = 16 m
Ω @ V
GS = 2.5 V
• Low gate charge (16 nC)
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
G
TO-252
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Continuous Drain Current @TC=25°C
(Note 3)
50
A
@TA=25°C
(Note 1a)
14.7
Pulsed
(Note 1a)
60
Power Dissipation
@TC=25°C
(Note 3)
44
@TA=25°C
(Note 1a)
3.8
PD
@TA=25°C
(Note 1b)
1.6
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
3.4
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
45
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD3706
FDD3706
D-PAK (TO-252)
13’’
12mm
2500 units
FDU3706
FDU3706
I-PAK (TO-251)
Tube
N/A
75


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