전자부품 데이터시트 검색엔진 |
|
TLP281GB 데이터시트(PDF) 3 Page - Toshiba Semiconductor |
|
TLP281GB 데이터시트(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TLP281,TLP281-4 2007-10-01 3 Absolute Maximum Ratings (Ta = 25℃) RATING CHARACTERISTIC SYMBOL TLP281 TLP281−4 UNIT Forward Current IF 50 mA Forward Current Derating ∆IF /°C −0.7 (Ta≥53°C) −0.5 (Ta≥25°C) mA /°C Pulse Forward Current IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Collector-Emitter Voltage VCEO 80 V Emitter-Collector Voltage VECO 7 V Collector Current IC 50 mA Collector Power Dissipation (1 Circuit) PC 150 100 mW Collector Power Dissipation Derating(Ta≥25°C) (1 Circuit) ∆PC /°C −1.5 −1.0 mW /°C Junction Temperature Tj 125 °C Operating Temperature Range Topr −55~100 °C Storage Temperature Range Tstg −55~125 °C Lead Soldering Temperature Tsol 260 (10s) °C Total Package Power Dissipation (1 Circuit) PT 200 170 mW Total Package Power Dissipation Derating (Ta≥25°C) (1 Circuit) ∆PT /°C −2.0 −1.7 mW /°C Isolation Voltage (Note1) BVS 2500(AC,1min,R.H.≤60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note1) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted together. Individual Electrical Characteristics (Ta = 25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse Current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF Collector-Emitter Breakdown Voltage V(BR) CEO IC = 0.5 mA 80 — — V Emitter-Collector Breakdown Voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V, Ambient Light Below (100 ℓx) — 0.01 (2) 0.1 (10) μA Collector Dark Current (Note2) ICEO VCE = 48 V, Ta = 85°C Ambient Light Below (100 ℓx) — 2 (4) 50 (50) μA Capacitance (Collector to Emitter) CCE V = 0, f = 1 MHz — 10 — pF (Note 2) Because of the construction,leak current might be increased by ambient light. Please use photocoupler with less ambient light. |
유사한 부품 번호 - TLP281GB |
|
유사한 설명 - TLP281GB |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |