FDD6612 datasheet(2/6 Pages) FAIRCHILD

부품명	FDD6612

상세설명	N-Channel, Logic Level, PowerTrench??MOSFET

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제조업체	FAIRCHILD [Fairchild Semiconductor]

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2 / 6 page

FDD6612A/FDU6612A Rev. E(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain-Source Avalanche Ratings (Note 2)

WDSS

Drain-Source Avalanche Energy

Single Pulse, VDD = 27 V, ID=10 A

51

mJ

IAR

Drain-Source Avalanche Current

10

A

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

µA

30

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250

µA,Referenced to 25°C

25

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

1

µA

IGSS

Gate–Body Leakage

VGS =

±20 V, V

DS = 0 V

±100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250

µA

1

2.0

3

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA,Referenced to 25°C

–5.1

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 9.5 A

VGS = 4.5 V,

ID = 8 A

VGS = 10 V,

ID = 9.5 A, TJ=125

°C

15

20

23

20

28

33

m

Ω

gFS

Forward Transconductance

VDS = 5 V,

ID = 9.5 A

28

S

Dynamic Characteristics

Ciss

Input Capacitance

660

pF

Coss

Output Capacitance

170

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

90

pF

RG

Gate Resistance

VGS = 15 Mv,

f = 1.0 MHz

2.3

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

9

18

ns

tr

Turn–On Rise Time

5

10

ns

td(off)

Turn–Off Delay Time

24

38

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

Ω

4

8

ns

Qg

Total Gate Charge

6.7

9.4

nC

Qgs

Gate–Source Charge

2.1

nC

Qgd

Gate–Drain Charge

VDS = 15 V,

ID = 9.5 A,

VGS = 5 V

2.7

nC

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