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FDG312P 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FDG312P 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDG312P Rev. C DMOS Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C-19 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C2.5 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -1.2 A VGS = -4.5 V, ID = -1.2 A @125 °C VGS = -2.5 V, ID = -1 A 0.135 0.200 0.187 0.18 0.29 0.25 Ω ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -3 A gFS Forward Transconductance VDS = -5 V, ID = -1.2 A 3.8 S Dynamic Characteristics Ciss Input Capacitance 330 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz 35 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 7 15 ns tr Turn-On Rise Time 12 22 ns td(off) Turn-Off Delay Time 16 26 ns tf Turn-Off Fall Time VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 Ω 512 ns Qg Total Gate Charge 3.3 5 nC Qgs Gate-Source Charge 0.8 nC Qgd Gate-Drain Charge VDS = -10 V, ID = -1.2 A, VGS = -4.5 V 0.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -0.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.6 A (Note 2) -0.83 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 170 °C/W when mounted on a 1 in2 pad of 2oz copper. b) 225 °C/W when mounted on a half of package sized 2oz. copper. c) 260 °C/W when mounted on a minimum pad of 2oz copper. |
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